Nonlocal voltage in a spin field effect transistor with finite channel width

Authors
Eom, JonghwaKoo, Hyun CheolChang, JoonyeonHan, Suk Hee
Issue Date
2011-05
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.11, no.3, pp.276 - 279
Abstract
Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel. (C) 2010 Elsevier B.V. All rights reserved.
Keywords
ELECTRONIC MEASUREMENT; ELECTRICAL DETECTION; PRECESSION; INJECTION; TRANSPORT; METALS; ELECTRONIC MEASUREMENT; ELECTRICAL DETECTION; PRECESSION; INJECTION; TRANSPORT; METALS; Spin field effect transistor; Spin-orbit interaction; Rashba spin splitting
ISSN
1567-1739
URI
https://pubs.kist.re.kr/handle/201004/130404
DOI
10.1016/j.cap.2010.07.019
Appears in Collections:
KIST Article > 2011
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