Phase transformation mechanism of In-Sb-Te through the boundary reaction between InSb and InTe

Authors
Kim, Yong TaeKim, Eun TaeKim, Chung SooLee, Jeong Yong
Issue Date
2011-03
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.5, no.3, pp.98 - 100
Abstract
The boundary reaction between InSb and InTe bilayers shows that In3Sb1Te2 (IST) is formed at the InTe side first due to the diffusion of Sb atoms from InSb to InTe rather than the diffusion of Te atoms from InTe to InSb at the crystallization temperature of IST. The diffusion of Sb atoms into InTe changes the atomic configuration of InTe, which leads to small lattice distortion and a coherent boundary region for the formation of IST crystalline thin films. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
CHANGE MEMORY; MULTIBIT STORAGE; FILM; CHANGE MEMORY; MULTIBIT STORAGE; FILM; phase change materials; InSbTe; phase transitions; transmission electron microscopy; TEM
ISSN
1862-6254
URI
https://pubs.kist.re.kr/handle/201004/130579
DOI
10.1002/pssr.201004515
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KIST Article > 2011
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