Blueshifting of Ion-Implanted InGaAs/InGaAsP Multiple Quantum Well Structures Using Two-Step Rapid Temperature Annealing Process

Abstract

Investigation of implantation-enhanced quantum-well intermixing has been described in a lattice-matched InGaAs/InGaAsP multiple quantum well p-i-n heterostructure. Samples are implanted with a dose of 5 x 1014 P+ ions/cm(2) at high energy of 1 MeV. The band gaps in the samples are determined from photoluminescence at room temperature. The rapid thermal annealing (RTA) process is carried out from 675 to 875 degrees C in intervals 50 degrees C for 9 min and then the blue-shift of the band gap at 675 degrees C is as large as 107 nm. However, it is improved to 140nm when a novel two-step annealing process is conducted at 675 degrees C (9 min) and 875 degrees C (1 min) in sequence. (C) 2011 The Japan Society of Applied Physics