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dc.contributor.authorKoo, Hyun Cheol-
dc.contributor.authorKwon, Jae Hyun-
dc.contributor.authorEom, Jonghwa-
dc.contributor.authorChang, Joonyeon-
dc.contributor.authorHan, Suk Hee-
dc.contributor.authorJohnson, Mark-
dc.date.accessioned2024-01-20T17:33:18Z-
dc.date.available2024-01-20T17:33:18Z-
dc.date.created2021-09-02-
dc.date.issued2011-02-16-
dc.identifier.issn0022-3727-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/130635-
dc.description.abstractGate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin-orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectNONCENTROSYMMETRIC SEMICONDUCTORS-
dc.subjectORBIT INTERACTION-
dc.subjectINJECTION-
dc.subjectHETEROSTRUCTURE-
dc.subjectRELAXATION-
dc.subjectTRANSPORT-
dc.subjectELECTRONS-
dc.subjectCHARGE-
dc.subjectMETAL-
dc.titleGate modulation of spin precession in a semiconductor channel-
dc.typeArticle-
dc.identifier.doi10.1088/0022-3727/44/6/064006-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.44, no.6-
dc.citation.titleJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.citation.volume44-
dc.citation.number6-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000286659800007-
dc.identifier.scopusid2-s2.0-79551704633-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusNONCENTROSYMMETRIC SEMICONDUCTORS-
dc.subject.keywordPlusORBIT INTERACTION-
dc.subject.keywordPlusINJECTION-
dc.subject.keywordPlusHETEROSTRUCTURE-
dc.subject.keywordPlusRELAXATION-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusELECTRONS-
dc.subject.keywordPlusCHARGE-
dc.subject.keywordPlusMETAL-
dc.subject.keywordAuthorgate modulation-
dc.subject.keywordAuthorspin precession-
dc.subject.keywordAuthorsemiconductor channel-
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