Electrically induced conducting nanochannels in an amorphous resistive switching niobium oxide film

Abstract

Metallic nanostructures that act as electrical switches between bistable resistance states are created electrically in an insulating amorphous niobium oxide thin film. The physical formation of the metallic nanostructures are probed using in situ focused ion beam scanning electron microscopy equipped with a current-voltage measurement system. While the electroforming process changes the film, dramatically inducing metallic nanochannels across it, significant changes in the film do not occur during repeated resistance switching afterward. A qualitative resistive switching model is proposed taking into account the gradual forming process. (C) 2010 American Institute of Physics. [doi:10.1063/1.3525710]