FePdB layer for perpendicular magnetic tunnel junctions

Authors
Choi, Gyung-MinMin, Byoung-ChulShin, Kyung-Ho
Issue Date
2010-11
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.97, no.20
Abstract
We have investigated the feasibility of using FePdB alloy layers for perpendicular magnetic tunnel junctions (p-MTJs). The perpendicular magnetic anisotropy (PMA) of FePdB films is obtained by depositing amorphous Fe40Pd40B20 layers on proper templates and by postannealing. An FePdB film on a thick Pt (001) underlayer has a PMA energy (K-u) of 4.9 x 10(6) erg/cm(3), and an FePdB layer sandwiched by two thin MgO (001) layers shows a K-u of 3.7 x 10(6) erg/ cm(3). A double barrier p-MTJ with an FePdB middle layer shows a tunnel magnetoresistance of 6.8%. (C) 2010 American Institute of Physics. [doi:10.1063/1.3517482]
Keywords
ROOM-TEMPERATURE; MAGNETORESISTANCE; ANISOTROPY; FILMS; magnetic tunnel junction; perpendicular magnetic anisotropy; tunnel magnetoresistance
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/130969
DOI
10.1063/1.3517482
Appears in Collections:
KIST Article > 2010
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