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dc.contributor.authorChong, Eugene-
dc.contributor.authorJo, Kyoung Chul-
dc.contributor.authorLee, Sang Yeol-
dc.date.accessioned2024-01-20T19:32:11Z-
dc.date.available2024-01-20T19:32:11Z-
dc.date.created2021-09-02-
dc.date.issued2010-04-12-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/131544-
dc.description.abstractTime dependence of the threshold voltage (V-th) shift in amorphous hafnium-indium-zinc oxide (a-HIZO) thin film transistor has been reported under on-current bias temperature stress measured at 60 degrees C. X-ray photoelectron spectroscopy results show the decrease in oxygen vacancies by Hf metal cations in a-HIZO systems after annealing process. High stability of a-HIZO systems has been observed due to low charge injection from the channel layer. Hf metal cations have been effectively incorporated into the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleHigh stability of amorphous hafnium-indium-zinc-oxide thin film transistor-
dc.typeArticle-
dc.identifier.doi10.1063/1.3387819-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.96, no.15-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume96-
dc.citation.number15-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000276794100033-
dc.identifier.scopusid2-s2.0-77951531173-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthoramorphous semiconductors-
dc.subject.keywordAuthorannealing-
dc.subject.keywordAuthorcharge injection-
dc.subject.keywordAuthorhafnium compounds-
dc.subject.keywordAuthorindium compounds-
dc.subject.keywordAuthorthin film transistors-
dc.subject.keywordAuthorvacancies (crystal)-
dc.subject.keywordAuthorX-ray photoelectron spectra-
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