High-Performance a-IGZO TFT With ZrO2 Gate Dielectric Fabricated at Room Temperature

Abstract

We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO2 gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. ZrO2 is one of the most promising high-k materials. The a-IGZO TFT (channel W/L = 240/30 mu m) with ZrO2 shows high performance such as high ON current of 2.11 mA and high field effect mobility of 28 cm(2)/(V. s) at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches.