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dc.contributor.authorShin, Il-Jae-
dc.contributor.authorMin, Byoung-Chul-
dc.contributor.authorHong, Jin Pyo-
dc.contributor.authorShin, Kyung-Ho-
dc.date.accessioned2024-01-20T20:31:21Z-
dc.date.available2024-01-20T20:31:21Z-
dc.date.created2021-09-05-
dc.date.issued2009-11-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/131998-
dc.description.abstractWe study the effect of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by high-temperature in situ annealing above 400 degrees C, circumventing Mn diffusion conventionally caused by postannealing process. The high temperature in situ annealing leads to Ru diffusion at the CoFeB/Ru interfaces, and thereby results in a reduction in tunnel magnetoresistance (TMR). The minimization of Ru diffusion during the in situ annealing provides a large TMR of 294% at room temperature with an exchange-bias field of 280 Oe. In addition, the temperature and voltage dependence of TMR reveals that there is neither significant spin-exchange scattering nor severe impurity-assisted scattering in the MgO barrier.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleEffects of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by in situ annealing-
dc.typeArticle-
dc.identifier.doi10.1063/1.3268791-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.95, no.22-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume95-
dc.citation.number22-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000272627600039-
dc.identifier.scopusid2-s2.0-71949130388-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordAuthordiffusion-
dc.subject.keywordAuthorhigh-temperature effects-
dc.subject.keywordAuthorimpurity scattering-
dc.subject.keywordAuthormagnesium compounds-
dc.subject.keywordAuthormagnetic impurities-
dc.subject.keywordAuthormagnetic tunnelling-
dc.subject.keywordAuthorruthenium-
dc.subject.keywordAuthortunnelling magnetoresistance-
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