Mechanism of shear transformation in Ge-Bi-Te alloys
- Authors
- Sun, Chang Woo; Lee, Jeong Yong; Kim, Yong Tae
- Issue Date
- 2009-10
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.3, no.7-8, pp.254 - 256
- Abstract
- Since the rhombohedral unit cell in the NaCl lattice is caused by distortion along the < 111 > NaCl direction, the same phenomenon is expected during phase transition of Ge-Bi-Te (GBT). With this assumption, we performed transmission electron microscopy (TEM) studies on the phase transition in GBT alloys annealed at temperatures between the two crystallization temperatures. Atomic-scale TEM images show the formation of a GBT intermediate structure during the phase transition. Using the obtained results, we developed a new phase transition model in which the Ge/Bi layers are ordered in the < 111 > direction; further, continuous shearing and dilation occur in the {111} plane in < 111 > direction. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Keywords
- PHASE-CHANGE MATERIALS; SYSTEM; NACL; PHASE-CHANGE MATERIALS; SYSTEM; NACL; GeBiTe; Phase change memory
- ISSN
- 1862-6254
- URI
- https://pubs.kist.re.kr/handle/201004/132125
- DOI
- 10.1002/pssr.200903214
- Appears in Collections:
- KIST Article > 2009
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.