Interband transitions of InAsxSb1-x alloy films
- Authors
- Kim, T. J.; Yoon, J. J.; Hwang, S. Y.; Aspnes, D. E.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Song, J. D.
- Issue Date
- 2009-09-14
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.95, no.11
- Abstract
- We report pseudodielectric-function spectra from 1.5 to 6.0 eV of InAsxSb1-x ternary alloys obtained by spectroscopic ellipsometry. Energies of the E-1, E-1+Delta(1), E'(0), E'(0)+Delta'(0), E-2, E-2+Delta(2), E'(2), E'(2)+Delta(2), and E'(1) critical points (CPs) were obtained from numerically calculated second derivatives, and identifications established by band-structure calculations using the linear augmented Slater-type orbital method. The E-2, E-2+Delta(2), E'(2), and E'(2)+Delta(2) CP structures cross with increasing As-composition. Two saddle-point transitions, Delta(cu)(5)-Delta(vu)(5) and Delta(cl)(5)-Delta(vu)(5), are found for InSb. (C) 2009 American Institute of Physics. [doi:10.1063/1.3216056]
- Keywords
- INSB; GASB; INAS; GAAS; GAP; INP; INSB; GASB; INAS; GAAS; GAP; INP; InAsSb; Bandgap
- ISSN
- 0003-6951
- URI
- https://pubs.kist.re.kr/handle/201004/132160
- DOI
- 10.1063/1.3216056
- Appears in Collections:
- KIST Article > 2009
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