DSpace at KISTKIST Article2009

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dc.contributor.authorLee, Eui-Bok-
dc.contributor.authorJu, Byeong-Kwon-
dc.contributor.authorKim, Yong-Tae-
dc.date.accessioned2024-01-20T21:04:43Z-
dc.date.available2024-01-20T21:04:43Z-
dc.date.created2021-09-03-
dc.date.issued2009-07-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/132363-
dc.description.abstractEffects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys. (C) 2009 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.subjectMEMORY-
dc.subjectCRYSTALLIZATION-
dc.subjectSB-
dc.titlePhase change and electrical characteristics of Ge-Se-Te alloys-
dc.typeArticle-
dc.identifier.doi10.1016/j.mee.2009.03.089-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMICROELECTRONIC ENGINEERING, v.86, no.7-9, pp.1950 - 1953-
dc.citation.titleMICROELECTRONIC ENGINEERING-
dc.citation.volume86-
dc.citation.number7-9-
dc.citation.startPage1950-
dc.citation.endPage1953-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000267460100111-
dc.identifier.scopusid2-s2.0-67349118350-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusCRYSTALLIZATION-
dc.subject.keywordPlusSB-
dc.subject.keywordAuthorPhase change materials-
dc.subject.keywordAuthorGe-Se-Te alloys-
dc.subject.keywordAuthorChalcogenide-
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