Characterization of Electrochemically Grown Crystalline CuInSe2 Thin Films

Authors
Gujar, T. P.Shinde, V. R.Park, Jong-WonLee, Hyun KyungJung, Kwang-DeogJoo, Oh-Shim
Issue Date
2009-01
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.1, pp.E8 - E12
Abstract
To obtain thin films of crystalline copper indium diselenide (CuInSe2) onto the conducting substrates, the electrochemical experiments were conducted in an aqueous acidic solution of mixture of the corresponding salts. The influence of potential and substrate onto the orientation and surface morphology of CuInSe2 encountered by an electrodeposition technique is reported. The thin films have been characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy, and UV-visible spectroscopy. The Cu:In:Se ratio of electrodeposited CuInSe2 thin films was determined to be near 1:1:2 by electron dispersive spectroscopy. The XRD results revealed that the electrosynthesized thin film, deposited at cathodic potential of 700 mV (vs Ag/AgCl) have a preferential orientation along the (112) directions for tetragonal CuInSe2. The structural and morphological effects were observed with different substrates and potentials. The UV-visible absorption measurements indicated that the bandgap of the CuInSe2 film is 1.15 eV.
Keywords
ELECTRODEPOSITED CUINSE2; COMPLEXING AGENT; LAYERS; CELLS; CIS; ELECTRODEPOSITED CUINSE2; COMPLEXING AGENT; LAYERS; CELLS; CIS; copper compounds; crystal orientation; electrodeposition; field emission electron microscopy; optical constants; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface morphology; ternary semiconductors; ultraviolet spectra; visible spectra; X-ray diffraction
ISSN
0013-4651
URI
https://pubs.kist.re.kr/handle/201004/132843
DOI
10.1149/1.3005576
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KIST Article > 2009
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