Electrode dependence of bipolar resistive switching in SrZrO3 : Cr perovskite film-based memory devices

Abstract

The electrode dependence of bipolar resistive switching in SrZrO3:Cr-based metal-oxide-metal (MOM) structures was investigated. The Pt/SrZrO3:Cr/SrRuO3 structures showed bipolar resistive switching, and the polarities of external bias for set/reset processes were determined by the junction between SrZrO3:Cr film and SrRuO3 electrode. The MOM structure consisting of noble metal electrodes (Pt/SrZrO3:Cr/Pt) did not show resistive switching, while the TiOxNy-inserted MOM structure (Pt/SrZrO3:Cr/TiOxNy/Pt) exhibited reproducible resistive switching behavior. The results suggest that resistive switching behaviors are related to the formation and annihilation of oxygen vacancies within local conduction paths by electric-field-induced oxygen ion migration.