Interface resistance dependence of spin transport in a ferromagnet-semiconductor hybrid structure

Authors
Koo, Hyun CheolKwon, Jae HyunEom, JonghwaChang, JoonyeonHan, Suk-Hee
Issue Date
2008-04
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.320, no.8, pp.1436 - 1439
Abstract
The spin transport signals from NiFe and Co into two-dimensional electron gas layers are measured for various thicknesses of transmission barriers. A stable and reproducible electrical detection of spin transport was obtained only when the barrier thickness is less than 10 nm. The typical interface resistance to observe spin signals in this experiment is about 0.5 - 250 Omega, which is a neither transparent nor a severe tunneling limit. The optimal interface resistance depends on the ferromagnetic materials, but severe tunneling barrier is not proper for fully electrical spin transport. Device size is also a critical factor to decide the proper range of interface resistance. (c) 2007 Published by Elsevier B.V.
Keywords
INJECTION; INJECTION; spin transport; interface resistance; two-dimensional electron gas
ISSN
0304-8853
URI
https://pubs.kist.re.kr/handle/201004/133628
DOI
10.1016/j.jmmm.2007.12.001
Appears in Collections:
KIST Article > 2008
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