Microstructural investigation of SexTe100-x thin films deposited on Si(100) substrates by x-ray diffractometer and transmission electron Microscopy analysis
- Authors
- Kim, Eun Tae; Lee, Jeong Yong; Kim, Yong Tae
- Issue Date
- 2007-11
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.11, pp.7392 - 7395
- Abstract
- The microstructural properties of SexTe100-x (x = 16, 29, 38) thin films are investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. SexTe100-x, thin films have a Te hexagonal structure and Te{011} interplanar spacing decreases because some Se atoms occupy Te atomic sites, forming Se helical chains within the Te helical chains. By increasing the Se contents from 16 to 29 at. %, Se5.95Te1.05 monoclinic and Se hexagonal structures coexist in a grain and at 38 at. %, a Se hexagonal structure is observed within the Te hexagonal grain. This means that SexTe100-x thin films maintain the Te hexagonal structure and that phase separation does not occur owing to the short diffusion time.
- Keywords
- CONDUCTIVITY; ALLOY; SETE; CONDUCTIVITY; ALLOY; SETE; transmission electron microscopy; Se-Te solid solution; Se5.95Te1.05 monoclinic structure
- ISSN
- 0021-4922
- URI
- https://pubs.kist.re.kr/handle/201004/134016
- DOI
- 10.1143/JJAP.46.7392
- Appears in Collections:
- KIST Article > 2007
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