DSpace at KIST: Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate for the growth of SiNx capping layer

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Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate for the growth of SiNx capping layer

Title: Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate for the growth of SiNx capping layer

Authors: 최원준; 이희택; 우덕하; 이석; 김선호; 최상삼

Keywords: quantum well intermixing

Issue Date: 2000-03

Publisher: 2000 March Meeting Bulletin of the a Merican Physical Society

Citation: VOL 45, NO 1, 807-807

URI: https://pubs.kist.re.kr/handle/201004/13433

Appears in Collections:: KIST Publication > Conference Paper

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