The C2H2 gas effect on the growth behavior of remote plasma enhanced CVD SiC : H film

Abstract

SiC:H films were produced in a remote plasma enhanced chemical vapor deposition (RPE-CVD) system. The HMDS was chosen as the primary source gas and was fixed at constant flow rate of 10 sccm. The C2H2 gas input amount was varied from 3 to 200 sccm for the study of carbon effect on the film stoichiometry and bonding properties. The deposition temperature of the substrate was fixed at 400 degrees C, and the plasma power was fixed at 300 W. Using auger electron spectroscopy, the depth profile of the film was investigated with C2H2 flow rate changes. The C2H2 played an important role in the transition between sp(2) and sp(3) carbon hybridization bonds, which affected the growth behavior and properties of the films.