A transmission electron microscopy study on the atomic arrangement and grain growth of hexagonal structured Ge2Sb2Te5

Authors
Park, Yu JinLee, Jeong YongKim, Yong Tae
Issue Date
2006-11-15
Publisher
ELSEVIER SCIENCE BV
Citation
APPLIED SURFACE SCIENCE, v.253, no.2, pp.714 - 719
Abstract
The atomic arrangement and grain growth of the hexagonal structured Ge2Sb2Te5 were investigated by a transmission electron microscopy study. Unlike the isotropic crystallization of face-centered-cubic (fcc) structured Ge2Sb2Te5, the hexagonal structured Ge2Sb2Te5 grain was preferably grown to a large degree with a specific direction. As a result, we have revealed that the grain growth occurred parallel to the (0001) plane, and identified the atomic arrangement of the hexagonal structured Ge2Sb2Te5 having nine cyclic layers by analyzing the high-resolution transmission electron microscopy images and simulated images obtained in the direction of < 1120 > zone axis. (c) 2006 Elsevier B.V. All rights reserved.
Keywords
THIN-FILMS; RESISTANCE MEASUREMENTS; METASTABLE GE2SB2TE5; PHASE-TRANSITIONS; CRYSTALLIZATION; DIFFRACTION; MEMORY; THIN-FILMS; RESISTANCE MEASUREMENTS; METASTABLE GE2SB2TE5; PHASE-TRANSITIONS; CRYSTALLIZATION; DIFFRACTION; MEMORY; Ge2Sb2Te5; transmission electron microscopy; atomic arrangement; grain growth
ISSN
0169-4332
URI
https://pubs.kist.re.kr/handle/201004/134950
DOI
10.1016/j.apsusc.2005.12.158
Appears in Collections:
KIST Article > 2006
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