Co/CoAl/Co trilayer fabrication using spontaneous intermixing of Co and Al: Molecular dynamics simulation

Authors
Kim, Sang-PilChung, Yong-ChaeLee, Seung-CheolLee, Kwang-RyeolKim, Deok-Soo
Issue Date
2006-11-15
Publisher
ELSEVIER SCIENCE SA
Citation
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.135, no.1, pp.25 - 29
Abstract
A multilayer structure was simulated using spontaneous intermixing of Co and Al in epitaxial Co(1 1 (2) over bar 0)/CoAl/Co(1 1 (2) over bar 0) structures. When Al atoms with 0. 1 eV energy were deposited on Co(1 1 (2) over bar 0), an Al(1 0 0) thin film was grown without any intermixing. Interestingly, during subsequent deposition of Co atoms on the grown Al(1 0 0) thin film, an intermixed layer of ordered CoAl structure was spontaneously formed and a highly oriented Co(1 1 (2) over bar 0) crystalline phase was grown above the intermixed region. From the calculations of nearest neighbor distributions, various compositions of CoxAl1-x structures were observed in the mixed region. (c) 2006 Elsevier B.V. All rights reserved.
Keywords
MAGNETIC-PROPERTIES; EPITAXIAL-GROWTH; SANDWICHES; SURFACE; HETEROSTRUCTURES; DEPOSITION; INTERFACE; METALS; FILMS; MAGNETIC-PROPERTIES; EPITAXIAL-GROWTH; SANDWICHES; SURFACE; HETEROSTRUCTURES; DEPOSITION; INTERFACE; METALS; FILMS; multilayer; interface mixing; Co-Al; molecular dynamics
ISSN
0921-5107
URI
https://pubs.kist.re.kr/handle/201004/134952
DOI
10.1016/j.mseb.2006.08.027
Appears in Collections:
KIST Article > 2006
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