Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure

Authors
Choi, Woon-KyungKim, Doo-GunMoon, Yon-TaeChoi, Young-WanKim, Yong-KwanChoquette, Kent D.Lee, SeokWoo, Deok-Ha
Issue Date
2006-09-18
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.89, no.12
Abstract
The authors show that the optical properties of selectively oxidized vertical cavity lasers with a depleted optical thyristor structure have a low threshold current and high sensitivity to input optical light. The oxidized thyristor laser clearly shows a nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, and a very low threshold current of 0.65 mA are measured, making these devices attractive for optical processing applications. (c) 2006 American Institute of Physics.
Keywords
TRANSMISSION ELECTROPHOTONIC DEVICE; OPTOELECTRONIC SWITCH; VOLTAGE; MEMORY; TRANSMISSION ELECTROPHOTONIC DEVICE; OPTOELECTRONIC SWITCH; VOLTAGE; MEMORY; vertical cavity laser; Optical thyristor
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/135116
DOI
10.1063/1.2355362
Appears in Collections:
KIST Article > 2006
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