Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure
- Authors
- Choi, Woon-Kyung; Kim, Doo-Gun; Moon, Yon-Tae; Choi, Young-Wan; Kim, Yong-Kwan; Choquette, Kent D.; Lee, Seok; Woo, Deok-Ha
- Issue Date
- 2006-09-18
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.89, no.12
- Abstract
- The authors show that the optical properties of selectively oxidized vertical cavity lasers with a depleted optical thyristor structure have a low threshold current and high sensitivity to input optical light. The oxidized thyristor laser clearly shows a nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, and a very low threshold current of 0.65 mA are measured, making these devices attractive for optical processing applications. (c) 2006 American Institute of Physics.
- Keywords
- TRANSMISSION ELECTROPHOTONIC DEVICE; OPTOELECTRONIC SWITCH; VOLTAGE; MEMORY; TRANSMISSION ELECTROPHOTONIC DEVICE; OPTOELECTRONIC SWITCH; VOLTAGE; MEMORY; vertical cavity laser; Optical thyristor
- ISSN
- 0003-6951
- URI
- https://pubs.kist.re.kr/handle/201004/135116
- DOI
- 10.1063/1.2355362
- Appears in Collections:
- KIST Article > 2006
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