Improved performance of polymeric light-emitting diodes with an electron blocking layer

Abstract

In this paper, we describe a new approach for fabrication of high efficient polymeric light-emitting diodes (PLEDs). In the device configuration of ITO/HTL/EBL/EML/BaF2:Ca:Al (ITO: indium tin oxide, HTL: hole transport layer, EBL: electron blocking layer, EML: emitting layer), EBL contains cross-linkable moieties in order to make the layer which is insoluble to layering of an additional emitting polymer. The devices with EBL exhibit strong blue emissions and higher efficiency values than those in devices without EBL. The synthesis, characterization, device fabrication, and electroluminescence (EL) properties of devices will be presented.