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Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure

Authors

Jung, I. Y.; Park, Y. M.; Park, Y. J.; Lee, J. I.; Kim, T. W.

Issue Date

2006-08

Publisher

SPRINGER

Citation

JOURNAL OF MATERIALS SCIENCE, v.41, no.15, pp.5036 - 5039

Keywords

MU-M; PHOTOLUMINESCENCE; TEMPERATURE; INGAAS; SHAPE; WELL; SIZE; MU-M; PHOTOLUMINESCENCE; TEMPERATURE; INGAAS; SHAPE; WELL; SIZE; quantum dot; compound semiconductor; In-flush; spacer layer; optical properties; structural property

ISSN

0022-2461

URI

https://pubs.kist.re.kr/handle/201004/135303

DOI

10.1007/s10853-006-0133-5

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KIST Article > 2006

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