DSpace at KISTKIST Article2006

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dc.contributor.authorJung, I. Y.-
dc.contributor.authorPark, Y. M.-
dc.contributor.authorPark, Y. J.-
dc.contributor.authorLee, J. I.-
dc.contributor.authorKim, T. W.-
dc.date.accessioned2024-01-21T02:35:30Z-
dc.date.available2024-01-21T02:35:30Z-
dc.date.created2021-09-01-
dc.date.issued2006-08-
dc.identifier.issn0022-2461-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/135303-
dc.languageEnglish-
dc.publisherSPRINGER-
dc.subjectMU-M-
dc.subjectPHOTOLUMINESCENCE-
dc.subjectTEMPERATURE-
dc.subjectINGAAS-
dc.subjectSHAPE-
dc.subjectWELL-
dc.subjectSIZE-
dc.titleDependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure-
dc.typeArticle-
dc.identifier.doi10.1007/s10853-006-0133-5-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS SCIENCE, v.41, no.15, pp.5036 - 5039-
dc.citation.titleJOURNAL OF MATERIALS SCIENCE-
dc.citation.volume41-
dc.citation.number15-
dc.citation.startPage5036-
dc.citation.endPage5039-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000239559100056-
dc.identifier.scopusid2-s2.0-33748882196-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusMU-M-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusINGAAS-
dc.subject.keywordPlusSHAPE-
dc.subject.keywordPlusWELL-
dc.subject.keywordPlusSIZE-
dc.subject.keywordAuthorquantum dot-
dc.subject.keywordAuthorcompound semiconductor-
dc.subject.keywordAuthorIn-flush-
dc.subject.keywordAuthorspacer layer-
dc.subject.keywordAuthoroptical properties-
dc.subject.keywordAuthorstructural property-
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