Stability enhancement of nanopillar structure for spin transfer magnetization switching using IrMn buffer layer

Abstract

We report here the effect of ultrathin IrMn buffer layer on the magnetic and spin transport properties of spintronic structure for current-induced magnetization switching. The insertion of the ultrathin (similar to 1 nm) IrMn buffer layer drastically enhanced the coercive field of the fixed ferromagnetic layer from 36 to 215 Oe. Interestingly, the ultrathin IrMn buffer layer even enhanced the magnetoresistance ratio about 30%, and consequently the spin polarization effect was enhanced by reducing the critical current density of magnetization switching from 3.13x10(8) to 1.16x10(8) A/cm(2). (C) 2006 American Institute of Physics.