LSGM계 고체산화물 연료전지의 계면안정성을 위한 완충층의 도입

Other Titles
Intrduction of a Buffering Layer for the Interfacial Stability of LSGM-Based SOFCs
Authors
김병국문주호김주선이해원이종호손지원김광년
Issue Date
2005-09
Publisher
한국세라믹학회
Citation
한국세라믹학회지, v.42, no.9, pp.637 - 644
Abstract
In order to find a proper buffering material which can prohibit an unwanted interfacial reaction between anode and electrolyte of LSGM-based SOFC, we examined a gadolinium doped ceria and scandium doped zirconia as a candidate. For this examination, we investigated the microstructural and phase stability of the interface under different buffering layer conditions. According to the investigation, ceria based material induced a serious La diffusion out of the LSGM electrolyte resulted in the formation of very resistive LaSrGa3O7 phase at the interface. On the other hand zirconia based material was directly reacted with LSGM electrolyte and thus produced very resistive reaction products such as La2Zr2O7, Sr2ZrO4, LaSrGaO4 and LaSrGa3O7. From this study we found that an improper buffering material induced the higher internal cell resistance rather than an interfacial stability.
Keywords
SOFC; LSGM; GDC; ScSZ; Buffering layer; Interfacial reaction
ISSN
1229-7801
URI
https://pubs.kist.re.kr/handle/201004/136161
Appears in Collections:
KIST Article > 2005
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE