Effects of annealing process on dielectric properties of (Ba,Sr)TiO3 thin films grown by RF magnetron sputtering

Abstract

Single phase thin films of (Ba0.5Sr0.5)TiO3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100 degrees C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.