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dc.contributor.authorHa, JY-
dc.contributor.authorChoi, JW-
dc.contributor.authorKang, CY-
dc.contributor.authorKarmanenko, SF-
dc.contributor.authorYoon, SJ-
dc.contributor.authorChoi, DJ-
dc.contributor.authorKim, HJ-
dc.date.accessioned2024-01-21T04:32:15Z-
dc.date.available2024-01-21T04:32:15Z-
dc.date.created2021-09-04-
dc.date.issued2005-09-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/136172-
dc.description.abstractSingle phase thin films of (Ba0.5Sr0.5)TiO3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100 degrees C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice.-
dc.languageEnglish-
dc.publisherJAPAN SOC APPLIED PHYSICS-
dc.subjectELECTRICAL-PROPERTIES-
dc.titleEffects of annealing process on dielectric properties of (Ba,Sr)TiO3 thin films grown by RF magnetron sputtering-
dc.typeArticle-
dc.identifier.doi10.1143/JJAP.44.L1196-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.44, no.37-41, pp.L1196 - L1198-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS-
dc.citation.volume44-
dc.citation.number37-41-
dc.citation.startPageL1196-
dc.citation.endPageL1198-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000232641900012-
dc.identifier.scopusid2-s2.0-32044474457-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordAuthorBST RF sputtering-
dc.subject.keywordAuthorferroelectric-
dc.subject.keywordAuthormicrowave-
dc.subject.keywordAuthortunable devices-
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KIST Article > 2005
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