Multi-scale simulation of plasma generation and film deposition in a circular type DC magnetron sputtering system
- Authors
- Kwon, UH; Choi, SH; Park, YH; Lee, WJ
- Issue Date
- 2005-03-22
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- THIN SOLID FILMS, v.475, no.1-2, pp.17 - 23
- Abstract
- We present a computational study on the plasma generation and film deposition in a circular type DC magnetron sputtering system. Design optimization of a large-area magnetron sputtering system needs a precise multi-scale simulation considering a target erosion by magnetron plasma, a macrofilm deposition by collisional transport, and a micro-deposition topography by collisionless transport. Our multi-scale simulation consists of particle-in-cell and Monte Carlo collision method (PIC-MCC) magnetron plasma simulation and Monte Carlo macro/microfilm deposition simulation. Thompson energy distribution and cosine angular distribution are used for the kinetic energy distribution and for the angular flux distribution of the sputtered atoms, respectively. A variable hard sphere (VHS) model is used to calculate the collision cross section of sputtered atoms and an equi-volume rate model (EVRM) is used to represent evolving film surface. The target erosion profiles are expected from the ion current density distribution on the sputter target simulated by two-dimensional PIC-MCC magnetron plasma simulator, and these profiles are compared with the experimental results. We present a discussion about the optimum detection range for the quasi-steady state of magnetron plasma in PIC-MCC simulation. Macro/microfilm deposition simulator predicts the macrofilm uniformity over the wafer and the micro-deposition topography in the micro-holes. Finally, we present a new algorithm, which can generate an asymmetric angular flux distribution, based on Monte Carlo method for microfilm deposition simulation. (C) 2004 Elsevier B.V. All rights reserved.
- Keywords
- DISCHARGE; ATOMS; DISCHARGE; ATOMS; computer simulation; particle-in-cell; Monte Carlo collision; plasma processing and deposition; sputtering
- ISSN
- 0040-6090
- URI
- https://pubs.kist.re.kr/handle/201004/136641
- DOI
- 10.1016/j.tsf.2004.08.038
- Appears in Collections:
- KIST Article > 2005
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