Preparation of Ti-doped ZnO transparent conductive thin films by PLD method

Abstract

Ti-doped ZnO thin films were prepared on a soda-lime glass substrate without any post heat treatment by a pulsed laser deposition (PLD) method. Processing parameters such as deposition substrate temperature, the amount of Ti-doping and oxygen flow rate were investigated. It was found that the Ti-doped ZnO thin films exhibited a strongly preferred orientation along a C-axis (002) plane and their structural, electrical and optical properties depended strongly on these parameters. Transparent conducting ZnO oxide thin films with 1 mol% Ti content formed under the conditions of a substrate temperature of 100 degrees C in an oxygen flow rate of 10 sccm showed an electrical resistivity of 3.3 x 10(-2) ohm cm, a mean optical transmittance of 92.3% with a thickness of 480 nm.