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dc.contributor.authorKyoung Ran Han-
dc.contributor.author김창삼-
dc.contributor.authorJung Woong Jung-
dc.date.accessioned2024-01-21T06:01:14Z-
dc.date.available2024-01-21T06:01:14Z-
dc.date.created2021-09-06-
dc.date.issued2004-12-
dc.identifier.issn1229-7801-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/136962-
dc.description.abstractEffects of NiO were studied in aspects of dielectric properties and microstructure of 0.96(0.91Pb(Mg1/3Nb2/3)O3-0.09PbTiO3)-0.04BaTiO3 (PMN-PT-BT, PBT). The PBT was prepared by a conventional mixed oxide method using (MgCO3)4Mg(OH)2 instead of MgO through Lewis acid-base interaction. NiO was added in the range of 0.5 to 3.0 wt% as thermally decomposable 2NiCO33Ni(OH)2 and it seemed to enhance densification to a large extent below 1000℃. But all the systems gave rise to ceramics with almost same relative sintered density of 96% by sintering at 1000℃ for 2 h. But it turned out that the addition of NiO was detrimental to dielectric constant but beneficial to the loss of dielectric constant.-
dc.publisher한국세라믹학회-
dc.titleEffect of NiO on Microstructure and Properties of PMN-PT-BT Ceramics Prepared by Mixed Oxide Method-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국세라믹학회지, v.41, no.12, pp.3 - 3-
dc.citation.title한국세라믹학회지-
dc.citation.volume41-
dc.citation.number12-
dc.citation.startPage3-
dc.citation.endPage3-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001096229-
dc.subject.keywordAuthorPNM-PT-BT-
dc.subject.keywordAuthorDielectric properties-
dc.subject.keywordAuthorLow temperature sintering1. IntroductionMany modified relaxor materials based on Pb(Mg1/3Nb2/3)O3 have been studied to optimize their achievable dielectric and electrostrictive properties for various applications su-
dc.subject.keywordAuthorPNM-PT-BT-
dc.subject.keywordAuthorDielectric properties-
dc.subject.keywordAuthorLow temperature sintering1. IntroductionMany modified relaxor materials based on Pb(Mg1/3Nb2/3)O3 have been studied to optimize their achievable dielectric and electrostrictive properties for various applications su-
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