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Enhancement of photoluminescence and electrical properties of Ga-doped ZnO thin film grown on α -Al ₂ O ₃ (0001) single-crystal subastrate by rf magnetron sputtering through rapid thermal annealin

Title: Enhancement of photoluminescence and electrical properties of Ga-doped ZnO thin film grown on α -Al ₂ O ₃ (0001) single-crystal subastrate by rf magnetron sputtering through rapid thermal annealin

Authors: 조정; 나종범; 오민석; 송재훈; 윤기현; 정형진; 최원국

Keywords: Ga-doped ZnO(GZO); photoluminescence; rapid thermal annealing; interstitial; substitutional

Issue Date: 2001-10

Publisher: Japanese Journal of Applied Physics, Part 2 - Letters

Citation: VOL 40, NO 10A, L1-L4

URI: https://pubs.kist.re.kr/handle/201004/13709

ISSN: 0021-4922

Appears in Collections:: KIST Publication > Article

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