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dc.contributor.authorHan, IK-
dc.contributor.authorHeo, DC-
dc.contributor.authorSong, JD-
dc.contributor.authorLee, JI-
dc.date.accessioned2024-01-21T06:09:10Z-
dc.date.available2024-01-21T06:09:10Z-
dc.date.created2021-09-05-
dc.date.issued2004-11-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/137110-
dc.description.abstractWe have fabricated superluminescent diodes (SLD) by using InGaAs-InAs chirped quantum dots (QD). The spectral bandwidth of the SLD was measured to be 170 nm. These results explain the possibility of QD-based SLD exceeding the performance of multi-quantum well-based ones.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.titleStudy on superluminescent diodes using InGaAs-InAs chirped quantum dots-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no.5, pp.1193 - 1195-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume45-
dc.citation.number5-
dc.citation.startPage1193-
dc.citation.endPage1195-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART000901876-
dc.identifier.wosid000225146200012-
dc.identifier.scopusid2-s2.0-10444243342-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordAuthorquantum dots-
dc.subject.keywordAuthorsuperluminescent diodes-
dc.subject.keywordAuthoratomic layer epitaxy-
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