A new reference signal generation method for MRAM using a 90-degree rotated MTJ

Abstract

A new reference signal generation method for high-density MRAM is reported. 0.4 x 0.8 mum(2) magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-mum CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R-H and low-resistance state R-L regardless of applied voltage. When tested in 8 x 8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.