Curie temperature of ferromagnetic (Ga,Mn)N epitaxial films
- Authors
- Lee, JM; Ham, MH; Myoung, JM; Chang, JY; Hang, SH; Lee, WY
- Issue Date
- 2004-06
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.241, no.7, pp.1466 - 1469
- Abstract
- Electron-mediated ferromagnetism persisting to room temperature has been investigated in epitaxial (Ga,Mn)N films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy (PEMBE). The experimental value of T-C (similar to325 K) in the (Ga,Mn)N film with x = 0.3% from the difference (AM) between field-cooled (FC) and zero field-cooled (ZFC) magnetization curves is found to be lower than the estimated value of Tc (similar to407 K), obtained by the mean field approximations. The extra-ordinary Hall effect in the epitaxial (Ga,Mn)N film with x = 0.2% is found to appear in the temperature range 100 K - 300 K. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- Keywords
- ROOM-TEMPERATURE; ROOM-TEMPERATURE; Curie temperature; diluted magnetic semiconductor; GaMnN
- ISSN
- 0370-1972
- URI
- https://pubs.kist.re.kr/handle/201004/137550
- DOI
- 10.1002/pssb.200304607
- Appears in Collections:
- KIST Article > 2004
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