Magnetotransport in ferromagnetic (Ga,Mn)N epitaxial films
- Authors
- Ham, MH; Jeong, MC; Lee, WY; Myoung, JM; Lee, JM; Chang, JY; Han, SH
- Issue Date
- 2004-04
- Publisher
- TRANS TECH PUBLICATIONS LTD
- Citation
- DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, v.449-4, pp.1041 - 1044
- Abstract
- We present the ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with very low Mn concentrations grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N epitaxial films were found to exhibit ferromagnetic ordering with Curie temperature of 700 K. All the films exhibit n-type characteristics. The negative magnetoresistance was observed below 150 K, and found to gradually increase with decreasing temperature. The ferromagnetism in the (Ga,Mn)N is due to the Rudennan-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas.
- Keywords
- MAGNETIC SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; (Ga,Mn)N; PEMBE; ferromagnetism; magnetoresistance
- ISSN
- 0255-5476
- URI
- https://pubs.kist.re.kr/handle/201004/137682
- DOI
- 10.4028/www.scientific.net/MSF.449-452.1041
- Appears in Collections:
- KIST Article > 2004
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