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dc.contributor.authorKim, KS-
dc.contributor.authorLee, CE-
dc.contributor.authorLim, SH-
dc.date.accessioned2024-01-21T08:03:29Z-
dc.date.available2024-01-21T08:03:29Z-
dc.date.created2021-09-03-
dc.date.issued2003-11-03-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/138089-
dc.description.abstractMagnetization reversal behavior is examined under various nonuniform fields, the conditions of which are relevant to magnetic random access memory applications. During the magnetization reversal, the end domains play a key role at a uniform field, but they play a negligible role at a nonuniform field. Instead, a ripple pattern is initially formed in the interior and it progresses to form a vortex, resulting in a reversed domain. The switching field is found to be greater in the case of a nonuniform field, but, under a bias field, it is reduced greatly to a level similar to that for a uniform field. This result may indicate a wide window for the bit selectivity under a nonuniform field in magnetic random access memory applications. (C) 2003 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectELEMENTS-
dc.titleMagnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications-
dc.typeArticle-
dc.identifier.doi10.1063/1.1625105-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.83, no.18, pp.3761 - 3763-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume83-
dc.citation.number18-
dc.citation.startPage3761-
dc.citation.endPage3763-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000186256300039-
dc.identifier.scopusid2-s2.0-0344066248-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusELEMENTS-
dc.subject.keywordAuthormagnetization reversal-
dc.subject.keywordAuthornonuniform magnetic field-
dc.subject.keywordAuthorcomputer simulation-
dc.subject.keywordAuthormagnetic random access memory-
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KIST Article > 2003
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