Maximum power CW 2.45-W 1.55-mu m InGaAsP laterally tapered laser diodes

Abstract

1.55-mum InGaAsP tapered lasers were fabricated using a highly p-doped separate confinement layer and strained compensated multiple quantum wells. A maximum power of CW 2.45 W and a diffraction-limited power of CW I W was obtained at room temperature. A reduction of the non-radiative Auger recombination due to a uniform hole distribution in the strain compensated multiple quantum wells (MQWs) was responsible for the high maximum power of the tapered lasers. A high diffraction-limited power of over CW I W was achieved by using a broadened waveguide.