The effect of the amorphous insulator layer on conduction behaviors of the silica/indium tin oxide two-layer films

Authors
Kim, SWShin, YWBae, DSLee, JHKim, JLee, HW
Issue Date
2003-08-01
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.437, no.1-2, pp.242 - 247
Abstract
The effect of the amorphous insulator layer on conduction behavior of spin coated silica/sputtered indium tin oxide two-layer film was studied in terms of impedance spectroscopy measurements, and current-voltage characterizatics. I-V characteristics of the two-layer films have shown that the conduction mechanism changes from direct tunneling to space-charge-limited conduction, when zinc cations are added to the silica layer. An addition of the ionic dopant leads to a large decrease in sheet resistance of the two-layer film as shown in the Cole-Cole plot. Consequently, the conductivity enhancement of the two-layer film without a reduction in transparency was achieved by the introduction of zinc cations into the amorphous silica layer. (C) 2003 Elsevier Science B.V. All rights reserved.
Keywords
CHARGE-LIMITED CONDUCTION; LIGHT-EMITTING DEVICES; DOPED INDIUM OXIDE; THIN-FILMS; STABILIZED ZIRCONIA; OPTICAL-PROPERTIES; FIELD-EMISSION; ITO FILMS; TEMPERATURE; IMPEDANCE; CHARGE-LIMITED CONDUCTION; LIGHT-EMITTING DEVICES; DOPED INDIUM OXIDE; THIN-FILMS; STABILIZED ZIRCONIA; OPTICAL-PROPERTIES; FIELD-EMISSION; ITO FILMS; TEMPERATURE; IMPEDANCE; silicon oxide; indium tin oxide; conductivity; additive
ISSN
0040-6090
URI
https://pubs.kist.re.kr/handle/201004/138325
DOI
10.1016/S0040-6090(03)00681-3
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KIST Article > 2003
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