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dc.contributor.authorNandi, SK-
dc.contributor.authorChoi, WK-
dc.contributor.authorNoh, YS-
dc.contributor.authorOh, MS-
dc.contributor.authorMaikap, S-
dc.contributor.authorHwang, NM-
dc.contributor.authorKim, DY-
dc.contributor.authorChatterjee, S-
dc.contributor.authorSamanta, SK-
dc.contributor.authorMaiti, CK-
dc.date.accessioned2024-01-21T09:45:41Z-
dc.date.available2024-01-21T09:45:41Z-
dc.date.created2021-09-01-
dc.date.issued2002-10-24-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/139121-
dc.description.abstractThe electrical and interfacial properties of Ta2O5/ZnO/p-Si metal-insulator-semiconductor structures are investigated using high frequency capacitance-voltage and conductance-voltage characteristics. Charge trapping behaviour under Fowler-Nordheim constant current stressing is also reported. An interface state density (1.22 x 10(12) cm(-2) eV(-1)) has been observed for the Ta2O5/ZnO interface.-
dc.languageEnglish-
dc.publisherIEE-INST ELEC ENG-
dc.subjectZNO THIN-FILMS-
dc.subjectSI-
dc.subjectGROWTH-
dc.titleInvestigations on Ta2O5/ZnO insulator-semiconductor interfaces-
dc.typeArticle-
dc.identifier.doi10.1049/el:20020944-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTRONICS LETTERS, v.38, no.22, pp.1390 - 1392-
dc.citation.titleELECTRONICS LETTERS-
dc.citation.volume38-
dc.citation.number22-
dc.citation.startPage1390-
dc.citation.endPage1392-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000179220900062-
dc.identifier.scopusid2-s2.0-0037168211-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalResearchAreaEngineering-
dc.type.docTypeArticle-
dc.subject.keywordPlusZNO THIN-FILMS-
dc.subject.keywordPlusSI-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthorTa2O5/ZnO-
dc.subject.keywordAuthorMIS structure-
dc.subject.keywordAuthorC-V-
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