Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Park, MC | - |
dc.contributor.author | Huh, KS | - |
dc.contributor.author | Myoung, JM | - |
dc.contributor.author | Lee, JM | - |
dc.contributor.author | Chang, JY | - |
dc.contributor.author | Lee, KI | - |
dc.contributor.author | Han, SH | - |
dc.contributor.author | Lee, WY | - |
dc.date.accessioned | 2024-01-21T10:08:10Z | - |
dc.date.available | 2024-01-21T10:08:10Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2002-09 | - |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/139256 | - |
dc.description.abstract | We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films. (C) 2002 Elsevier Science Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | MAGNETIC SEMICONDUCTORS | - |
dc.title | Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/S0038-1098(02)00471-4 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | SOLID STATE COMMUNICATIONS, v.124, no.1-2, pp.11 - 14 | - |
dc.citation.title | SOLID STATE COMMUNICATIONS | - |
dc.citation.volume | 124 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 11 | - |
dc.citation.endPage | 14 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000178694900003 | - |
dc.identifier.scopusid | 2-s2.0-0036749557 | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | MAGNETIC SEMICONDUCTORS | - |
dc.subject.keywordAuthor | (Ga,Mn)N | - |
dc.subject.keywordAuthor | diluted magnetic semiconductor | - |
dc.subject.keywordAuthor | wide bandgap ferromagnetic semiconductor | - |
dc.subject.keywordAuthor | plasma-enhanced molecular beam epitaxy | - |
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