TMR of double spin-valve type AF/FM/I/FM/I/FM/AF magnetic tunneling junctions
- Authors
- Lee, JH; Chang, IW; Byun, SJ; Hong, TK; Rhie, K; Lee, WY; Shin, KH; Hwang, C; Lee, SS; Lee, BC
- Issue Date
- 2002-02
- Publisher
- ELSEVIER
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.240, no.1-3, pp.137 - 139
- Abstract
- An unusually large enhancement of TMR at 77 K was observed in double barrier tunnel junctions (DBTJ). This is explained with extended Julliere's model which yields a twice larger TMR value. When the spin coherence length is much smaller at higher temperature, DBTJ is shown to work as a series of two single barrier tunnel junctions. (C) 2002 Elsevier Science B.V. All rights reserved.
- Keywords
- MAGNETORESISTANCE; VOLTAGE; MAGNETORESISTANCE; VOLTAGE; magnetoresistance; thin films; TMR; MTJ; double barrier
- ISSN
- 0304-8853
- URI
- https://pubs.kist.re.kr/handle/201004/139813
- DOI
- 10.1016/S0304-8853(01)00761-2
- Appears in Collections:
- KIST Article > 2002
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