TMR of double spin-valve type AF/FM/I/FM/I/FM/AF magnetic tunneling junctions

Authors
Lee, JHChang, IWByun, SJHong, TKRhie, KLee, WYShin, KHHwang, CLee, SSLee, BC
Issue Date
2002-02
Publisher
ELSEVIER
Citation
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.240, no.1-3, pp.137 - 139
Abstract
An unusually large enhancement of TMR at 77 K was observed in double barrier tunnel junctions (DBTJ). This is explained with extended Julliere's model which yields a twice larger TMR value. When the spin coherence length is much smaller at higher temperature, DBTJ is shown to work as a series of two single barrier tunnel junctions. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords
MAGNETORESISTANCE; VOLTAGE; MAGNETORESISTANCE; VOLTAGE; magnetoresistance; thin films; TMR; MTJ; double barrier
ISSN
0304-8853
URI
https://pubs.kist.re.kr/handle/201004/139813
DOI
10.1016/S0304-8853(01)00761-2
Appears in Collections:
KIST Article > 2002
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