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Effect of dopants on cobalt silicidation behavior at metal-oxide-semiconductor field-effect transistor sidewall spacer edge

Authors

김종채; Yeong-Cheol Kim; 김병국

Issue Date

2001-10

Publisher

한국세라믹학회

Citation

한국세라믹학회지, v.38, no.10, pp.871 - 875

Keywords

cobalt silicidation; void; lightly doped drain (LDD); MOSFET

ISSN

1229-7801

URI

https://pubs.kist.re.kr/handle/201004/140129

Appears in Collections:

KIST Article > 2001

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