Atomic structure of Ba layer on Si(001)-(2 x 1) surface studied by low energy ion scattering

Authors
Cho, WSKim, JYKim, SSChoi, DSJeong, KLyo, IWWhang, CNChae, KH
Issue Date
2001-04-01
Publisher
ELSEVIER SCIENCE BV
Citation
SURFACE SCIENCE, v.476, no.3, pp.L259 - L266
Abstract
The atomic structure of Pa layer on Si(001)-(2 x 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.7 ML of Ba atoms are adsorbed on Si(001) at room temperature, the first preferential site of adsorption is T3 site with a height of 3.00 +/- 0.05 Angstrom from the second layer of Si(001) even though the periodicity is poor. The next favorable site is HH site with a height of 3.50 +/- 0.05 Angstrom from the second layer of Si(001). (C) 2001 Published by Elsevier Science B.V.
Keywords
SCANNING-TUNNELING-MICROSCOPY; BARIUM ADSORPTION; ROOM-TEMPERATURE; SI(100)-(2 X-1); LEED; SCANNING-TUNNELING-MICROSCOPY; BARIUM ADSORPTION; ROOM-TEMPERATURE; SI(100)-(2 X-1); LEED; surface structure, morphology, roughness, and topography; silicon; alkaline earth metals; low energy ion scattering (LEIS)
ISSN
0039-6028
URI
https://pubs.kist.re.kr/handle/201004/140538
DOI
10.1016/S0039-6028(01)00762-2
Appears in Collections:
KIST Article > 2001
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