DSpace at KISTKIST Article2001

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dc.contributor.author이상진-
dc.contributor.author변동진-
dc.contributor.author홍창희-
dc.contributor.author김긍호-
dc.date.accessioned2024-01-21T12:38:49Z-
dc.date.available2024-01-21T12:38:49Z-
dc.date.created2022-01-10-
dc.date.issued2001-03-
dc.identifier.issn1225-0562-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/140631-
dc.titleEffects of postannealing on GaN grown by MOCVD on reactive ion beam pretreated sapphire substrate-
dc.title.alternative활성화 이온빔 처리된 사파이어 기판상 MOCVD로 성장시킨 GaN의 열처리 효과-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국재료학회지 = Korean Journal of Materials Research, v.11, no.3, pp.191 - 196-
dc.citation.title한국재료학회지 = Korean Journal of Materials Research-
dc.citation.volume11-
dc.citation.number3-
dc.citation.startPage191-
dc.citation.endPage196-
dc.description.journalRegisteredClasskci-
dc.description.journalRegisteredClassother-
dc.subject.keywordAuthorGaN-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthorreactive ion beam-
dc.subject.keywordAuthor열처리-
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KIST Article > 2001
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