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Effect of dielectric-semiconductor capping layer combinations on impurity free vacancy disordering of InGaAs/InGaAsP single quantum well structure

Other Titles

InGaAs/InGaAsP 단일 양자우물구조의 impurity free vacancy disordering에서 유전체-반도체 덮개층 조합 효과

Authors

이희택; 최원준; 우덕하; 김선호; 조재원

Issue Date

2000-09

Publisher

한국물리학회

Citation

새물리, v.41, no.3, pp.193 - 198

Keywords

quantum well intermixing

ISSN

0374-4914

URI

https://pubs.kist.re.kr/handle/201004/141125

Appears in Collections:

KIST Article > 2000

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