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Dependence of the intermixing of an InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate during the growth of a SiN//x capping layer

Other Titles

SiNx 덮개층 성장 시 NH₃ 가스 유량비에 의존하는 InGaAs/InGaAsP 양자우물의 IFVD 공정

Authors

최원준; 이희택; 우덕하; 김선호; 조재원

Issue Date

2000-05

Publisher

한국물리학회

Citation

새물리, v.40, no.4, pp.349 - 352

Keywords

quantum well intermixing

ISSN

0374-4914

URI

https://pubs.kist.re.kr/handle/201004/141399

Appears in Collections:

KIST Article > 2000

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