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dc.contributor.authorLee, JI-
dc.contributor.authorBrini, J-
dc.contributor.authorChovet, A-
dc.contributor.authorDimitriadis, CA-
dc.date.accessioned2024-01-21T14:43:06Z-
dc.date.available2024-01-21T14:43:06Z-
dc.date.created2021-09-05-
dc.date.issued1999-12-
dc.identifier.issn0038-1101-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/141802-
dc.description.abstractAn explanation of low frequency 1/f noise in nonideal Schottky barrier diodes is presented where the current fluctuation is attributed to the random walk of electrons at the metal-semiconductor interface via modulation of the barrier height. The experimental results on TiN/n-Si Schottky diodes have been successfully analysed to give useful information on the interface states. (C) 1999 Elsevier Science Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectBARRIER DIODES-
dc.subject1/F NOISE-
dc.titleFlicker noise hy random walk of electrons at the interface in nonideal Schottky diodes-
dc.typeArticle-
dc.identifier.doi10.1016/S0038-1101(99)00187-2-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSOLID-STATE ELECTRONICS, v.43, no.12, pp.2185 - 2189-
dc.citation.titleSOLID-STATE ELECTRONICS-
dc.citation.volume43-
dc.citation.number12-
dc.citation.startPage2185-
dc.citation.endPage2189-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000084171000013-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusBARRIER DIODES-
dc.subject.keywordPlus1/F NOISE-
dc.subject.keywordAuthorlow frequency noise-
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