I-V characteristics and impedance spectroscopy of a single grain boundary in Nb-doped SrTiO3

Authors
Kim, SHKim, HTPark, JHKim, Y
Issue Date
1999-02
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
MATERIALS RESEARCH BULLETIN, v.34, no.3, pp.415 - 423
Abstract
The I-V character and impedance of a single grain boundary in No-doped SrTiO3 were investigated. The specimens were sintered at 1570 degrees C in air. A microelectrode method was used to measure the I-V character and the impedance of a single grain-to-grain junction. The single grain boundary of Nb-doped SrTiO3 was shown to have non-ohmic behavior, and the breakdown voltage of a single grain boundary was found to be about 7 V. The precise value of impedance could be determined by the microelectrode method. From fitting results, it was shown that the capacitances of the grain boundary increased and the resistances of the grain boundary decreased with increasing Nb content. (C) 1999 Elsevier Science Ltd.
Keywords
LAYER CAPACITORS; ZNO VARISTOR; CERAMICS; LAYER CAPACITORS; ZNO VARISTOR; CERAMICS; ceramics; impedance spectroscopy; dielectric properties; electrical properties
ISSN
0025-5408
URI
https://pubs.kist.re.kr/handle/201004/142433
DOI
10.1016/S0025-5408(99)00019-7
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KIST Article > Others
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