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dc.contributor.authorJu, BK-
dc.contributor.authorLee, YH-
dc.contributor.authorOh, MH-
dc.date.accessioned2024-01-21T16:35:50Z-
dc.date.available2024-01-21T16:35:50Z-
dc.date.created2021-09-03-
dc.date.issued1998-11-
dc.identifier.issn0026-2692-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/142787-
dc.description.abstractBy using a substrate transferring technique, poly-diamond thick films having a smooth or rough surface could be fabricated as field emitter materials. The diamond film with a smooth surface, which was transferred from the interface between the (100) Si substrate and poly diamond deposited by plasma-enhanced CVD, showed better field emission properties in terms of emission current density with improved vacuum level dependence as compared with original poly-diamond film from a rough surface. (C) 1998 Elsevier Science Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER ADVANCED TECHNOLOGY-
dc.titleFabrication and field emission properties of poly-diamond films-
dc.typeArticle-
dc.identifier.doi10.1016/S0026-2692(98)00018-4-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMICROELECTRONICS JOURNAL, v.29, no.11, pp.855 - 859-
dc.citation.titleMICROELECTRONICS JOURNAL-
dc.citation.volume29-
dc.citation.number11-
dc.citation.startPage855-
dc.citation.endPage859-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000075348100014-
dc.identifier.scopusid2-s2.0-0032209982-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorfield emission-
dc.subject.keywordAuthordiamond-
dc.subject.keywordAuthorfilm-
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